Level shifter

ABSTRACT

A level shifter includes: an input terminal configured to receive an input signal in a first voltage domain; a first output terminal; a second output terminal; a first inverter configured to receive and shift the input signal to a first output signal at the first output terminal in a second voltage domain higher than the first voltage domain in response to a logical high state of an enable signal in the first voltage domain; a second inverter configured to receive and shift a complement of the input signal to a second output signal at the second output terminal in the second voltage domain in response to the logical high state; a pair of NMOS sensing transistors; a PMOS transistor configured to equalize the first output signal and the second output signal in response to a logical low state of the enable signal.

CROSS-REFERENCE TO RELATED APPLICATION

This application is a continuation of application Ser. No. 16/389,461,filed Apr. 19, 2019, which application claims the benefit of provisionalapplication Ser. No. 62/717,206, filed Aug. 10, 2018, which applicationsare incorporated herein by reference in their entirety.

BACKGROUND

A level shifter is a device that shifts an electronic signal from onevoltage level to another voltage level. Numerous devices, such as staticrandom-access memory (SRAM) for example, perform certain operations moreefficiently and with better accuracy using specific voltage levelsignals. However, the voltage level of the signals inherent in thesedevices are not always suitable for every operation that the deviceperforms. Employing a level shifter allows for a device to shift thevoltage level of a signal to a value more appropriate to enhance theperformance of a specific operation.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isnoted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIG. 1 is a block diagram illustrating aspects of a level shifterimplemented with an SRAM device in accordance with some embodiments.

FIG. 2 is a block diagram illustrating aspects of a level shifter inaccordance with some embodiments.

FIG. 3 is a circuit diagram of a level shifter in accordance with someembodiments.

FIG. 4A is a circuit diagram of a level shifter system in accordancewith some embodiments.

FIG. 4B is a timing diagram illustrating example signals of a levelshifter system in accordance with some embodiments.

FIGS. 5A-E illustrate operation of the example level shifter systemshown in FIG. 4A in accordance with the timing diagram of FIG. 4B.

FIG. 6 is a flow-chart showing a level shifting method in accordancewith some embodiments.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the provided subjectmatter. Specific examples of components and arrangements are describedbelow to simplify the present disclosure. These are, of course, merelyexamples and are not intended to be limiting. For example, the formationof a first feature over or on a second feature in the description thatfollows may include embodiments in which the first and second featuresare formed in direct contact, and may also include embodiments in whichadditional features may be formed between the first and second features,such that the first and second features may not be in direct contact. Inaddition, the present disclosure may repeat reference numerals and/orletters in the various examples. This repetition is for the purpose ofsimplicity and clarity and does not in itself dictate a relationshipbetween the various embodiments and/or configurations discussed.

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The apparatus may be otherwise oriented (rotated 90 degreesor at other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly.

Level shifters are used, for example, to shift an input signal in a lowvoltage domain into an output signal in a higher voltage domain for useby other components in a device. For example, a “dual rail” SRAMarchitecture refers to an SRAM arrangement where the memory logic isoperated in a low voltage domain to conserve power, while the memoryarray is operated in the high voltage domain to improve performance.With such devices, memory leakage power may be reduced but the memoryaccess time may be impacted. The gain in leakage power increases as thedifference in the high voltage and low voltage value increases.

However, traditionally there is a supply voltage split range limitationdue to a transistor of the level shifter not being able to be cut-offwhen certain voltage levels are present. In some disclosed embodiments,a lever shifter includes a differential sensing transistor pair by whichthe supply voltage split range can be enlarged. This allows the yield ofthe device to remain high through a larger voltage range, among otherthings.

FIG. 1 is a block diagram depicting an example implementation of a levelshifter system 100 including a level shifter 104 coupled to an SRAMdevice 106 in accordance with some embodiments. While the SRAM device106 is shown coupled to the level shifter 104 in the example of FIG. 1,any device requiring a level shifter could be employed and is within thescope of this disclosure. In the example shown, an input signal IN isreceived on an input terminal 102 and passed to the level shifter 104and the SRAM device 106. The received input signal IN is in a first, orVDD voltage domain. The level shifter 104 takes the input signal IN andshifts it from the VDD domain to a second voltage domain, the VDDMdomain. The output signal from the level shifter 104 in the VDDM domainis used by the SRAM device 106 to optimize the operation of the SRAMdevice 106. By utilizing signals in both the VDD and VDDM domains, theSRAM device performance, such as the memory access speed, is increasedwhile the power consumption is minimized.

FIG. 2 is a block diagram showing aspects of an example of the levelshifter 104 in accordance with some embodiments. The level shifter 104is configured to receive an input signal IN at the input terminal 102 ina first voltage domain (VDD) and output an output signal OUT and itscomplement OUTB in a second voltage domain (VDDM) at first and secondoutput terminals 216, 218.

A first sensing circuit 204 is connected to the input terminal 102 andthe first and second output terminals 216, 218. The first sensingcircuit 204 is configured to shift the input signal IN from the firstvoltage domain (VDD) to the second voltage domain (VDDM). A secondsensing circuit 206 is also connected to the first and second outputterminals 216, 218 and is configured to receive an input bar signal INB322 (complement of the input signal IN), which is also in the VDDdomain. A first inverter 202 is connected to the input terminal 102 andis configured to output the complement of the input signal IN as theinput bar signal INB 322. The first and second sensing circuits 204, 206are connected to a voltage supply terminal 210 configured to receive aninput voltage VDDM in the second voltage domain. As noted previously,the first inverter 202 operates in the VDD domain and is thus connectedto a voltage supply terminal 212 configured to receive the VDD inputvoltage.

As discussed further herein below, the first and second sensing circuits204, 206 are additionally cross-coupled—the first output terminal 216 ofthe first sensing circuit 204 is connected to an input of the secondsensing circuit 206, and the second output terminal 218 of the secondsensing circuit 206 is connected to an input of the first sensingcircuit 204. The first and second sensing circuits 204, 206 areconfigured to shift the input signal from the first VDD domain to theVDDM voltage domain.

An enable circuit 208 is connected between the first sensing circuit 204and the second sensing circuit 206. The enable circuit 208 includes anenable terminal 214 configured to receive an enable signal EN. In someembodiments the enable signal EN is a clock pulse. The enable circuit208 is configured to equalize the voltage level of the first and secondoutput signals OUTB, OUT at the respective first and second outputterminals 216, 218. In some examples the enable circuit 204 equalizesthe output signals OUTB, OUT to a predetermined voltage level. Oneexample predetermined voltage level is one half the value of the secondinput voltage, VDDM. Additionally, in response to the enable and inputsignals, the level shifter 104 circuit is further configured to outputcomplementary output signals (216, 218) in the second voltage domain(VDDM) at the first and second output terminals.

FIG. 3 is a circuit diagram showing further details of an example of thelevel shifter 104 described in FIG. 2. The first inverter 202 iscomprised of a PMOS transistor 318 and an NMOS transistor 320. The firstsensing circuit 204 includes a second inverter 330 comprised of a PMOStransistor 302 and an NMOS transistor 308 coupled to a first NMOSsensing transistor 312. The gate of the first sensing transistor 312 iscoupled to the input terminal 102 and is thus configured to receive theinput signal IN.

The second sensing circuit 206 includes a third inverter 332 comprisedof a PMOS transistor 306 and an NMOS transistor 310 coupled to a secondNMOS sensing transistor 314. The gate of the second sensing transistor314 is configured to receive the complementary input signal INB 322provided by the first inverter 202. The first and second sensingtransistors 312, 314 thus form a differential sensing transistor pair.

The enable circuit 208 includes a PMOS transistor 304 coupled betweenthe first and second outputs 216, 218. The gate terminal 214 of thetransistor 304 is connected to receive an enable signal, which in theillustrated example is a clock pulse CKC2 in the VDD domain.Additionally, the enable circuit 208 includes an NMOS transistor 316having a gate terminal 214 connected to receive the enable signal, orclock pulse CKC2.

When the enable signal CKC2 is low, the VDD voltage at the gate of thetransistor 304 turns the transistor 304 at least partially on, whichcouples the gates of the transistors 302, 306, 308, and 310 together, aswell as the output terminals 216,218. The low enable signal CKC2 alsoturns the transistor 316 off, isolating the common source sensingtransistors 312, 314 from ground. Accordingly, the signals at the firstand second output terminals 216, 218 are equalized between VDDM andground, or about half of VDDM. Thus, as used herein, equalizing theoutput signals OUT, OUTB refers to setting the output signals OUT, OUTBat approximately the same voltage level (i.e. ±10%) at about half theVDDM voltage level based on the operation of the transistors 304 and 316of the equalization circuit 208 in response to the enable signal CKC2.

When the enable signal CKC2 is high the transistor 304 turns off,decoupling the gates of transistors 302, 306, 308, and 310 from oneanother, and decoupling the output terminals 216 and 218 from oneanother. Further, the high CKC2 signal connects a common node NCOMbetween the transistors 312, 314 to ground. The first and second sensingcircuits 204, 206 are then able to sense the input signal IN received atthe input terminal 102. Thus, a high input signal IN (in the VDD domain)turns on the sensing transistor 312, pulling the output signal OUTB low.The high input signal IN is further inverted by the first inverter 202and received as a low second input INB 322 by the gate of the sensingtransistor 314. The low INB 322 signal turns off sensing transistor 314,pulling the output signal OUT to the VDDM level through the transistors306, 310. If the first input signal IN is low while the enable signalCKC2 is high, the first sensing transistor 312 is turned off, whichpulls the output signal OUTB high at the VDDM level. The inverted inputsignal INB 322 turns on the sensing transistor 314, pulling the outputsignal OUT at the output terminal 218 low.

FIG. 4A illustrates an example level shifter system 500, where the levelshifter 104 has its output terminal 218 coupled to an output latch 502that operates in the VDDM domain. The output latch 502 is coupled to theoutput terminal 218 of the level shifter 104 to receive the outputsignal OUT from the level shifter 104 in the VDDM domain, and latchesthe output signal while the output signals OUT, OUTB are equalized asdisclosed above, among other things.

The latch 502 is coupled to the VDDM voltage terminal 210 and thusoperates in the VDDM domain. The latch 502 further includes clockterminals 402 and 404 that receive complementary clock signals CKC andCKT, as well as an output terminal 408 that provides the latch outputsignal OUT_LATCH. The latch is configured to latch the output signal OUTprovided by the level shifter 104 in the VDDM voltage domain in responseto the clock signal CKC and its complement CKT. In some examples, theclock signal CKC and the enable signal CKC2 are operated in phase withone another, though in the illustrated embodiment the enable signal CKC2is in the VDD domain, while the latch clock signal CKC is in the VDDMdomain. In other examples, the level shifter 104 and the latch 502 couldshare a common clock signal in the VDDM domain.

The latch 502 includes a first tri-state inverter 410 configured toinvert the output signal OUT from the level shifter 104 in response tothe clock signals CKC, CKT. The inverted output signal OUTBX is providedat an output node 406 of the tri-state inverter 410. The first tri-stateinverter 410 includes PMOS transistors 504 and 506, and NMOS transistors508 and 510 connected in series between the VDDM voltage terminal 210and ground. The gate terminals of the transistors 504 and 510 areconnected to receive the output signal OUT from the level shifter outputterminal 218, while the gate terminals of the transistors 506 and 508are connected to receive the clock signals CKT and CKC, respectively.The first tri-state inverter 410 provides the latch output bar signalOUTBX, which is received by an inverter 412 configured to reinvert theOUTBX signal from the first tri-state inverter. The second inverterincludes a PMOS transistor 520 and an NMOS transistor 522 connected inseries between the VDDM voltage terminal 210 ground. A second tri-stateinverter 414 includes PMOS transistors 512 and 514, and NMOS transistors516 and 518 connected in series between the VDDM voltage terminal 210and ground. The gate terminals of the transistors 514 and 516 areconnected to receive the clock signals CKC and CKT 404, respectively,while the gate terminals of the transistors 512 and 518 receive theoutput of the inverter 412 to latch the OUTBX signal in response to theclock signals CKC and CKT.

FIG. 4B is a timing diagram, showing example signals of the levelshifter 104 and latch 502 in accordance with the example embodiments.FIGS. 5A-E illustrate examples of the operation of the level shiftersystem 500 based on signals shown in the timing diagram of FIG. 4B.

During a first time period T1, the level shifter output signals OUT,OUTB are equalized to a predetermined voltage level, such as half ofVDDM as discussed herein above. FIG. 5A illustrates an example of thelevel shifter system 500 operation during the first time period T1. Asnoted above, during the first time period T1, the enable signal CKC2 islow to equalize the output signals OUT, OUTB of the level shifter 104 asindicated by the arrows between the inverters 330, 332. The low enablesignal CKC2 at least partially turns on the transistor 304 and turns offthe transistor 316, equalizing the output signals OUT, OUTB at abouthalf the value of VDDM. Thus, as used herein, equalizing the outputsignals OUT, OUTB refers to setting the output signals OUT, OUTB atapproximately the same voltage levels (i.e. ±10%) at about half the VDDMvoltage level based on the operation of the transistors 304 and 316 ofthe equalization circuit 208 in response to the enable signal CKC2.

During a second time period T2, the level shifter enable signal CKC2goes high. As noted previously, in the illustrated examples the enablesignal CKC2 is in phase with the latch clock signal CKC, whichaccordingly also goes high during the second time period T2 while thecomplement latch clock signal CKT goes low. The input signal IN at thelevel shifter input terminal 102 goes high during the second time periodT2. FIG. 5B shows operation of the system 500 during the second timeperiod T2. The high enable signal CKC2 turns off the transistor 304 andturns on the transistor 316, which provides a path to ground from thesensing transistors 312, 314. Since the input signal IN is high, thefirst sensing transistor 312 turns on, which in turn pulls down theoutput OUTB from its equalized state to a low value (ground).Additionally, the inverted input signal INB 322 turns the second sensingtransistor 314 off, pulling the output signal OUT from its equalizedstate to a high value (VDDM). Thus the input signal IN voltage level wasshifted from the VDD domain to the VDDM domain.

Additionally, the latch clock signals CKT and CKC turn on the firsttri-state inverter 410 and turn off the second tri-state inverter 414.The high output signal OUT is inverted by the first tri-state inverter410 of the latch 502 to produce a low OUTBX signal at the node 406 whichis fed through and output by the inverter 412 as the high latch outputOUT_LATCH.

Referring back to FIG. 4B, during a third time period T3, the enablesignal CKC2 and the latch clock signal CKC go low. The latch complementclock signal CKT accordingly goes high. As shown in FIG. 5C, the latchclock signals CKC, CKT turn off the first tri-state inverter 410 andturn on the second tri-state inverter, cutting off the latch feedthroughpath and activating a feedback path through the second tri-stateinverter 414. This latches the high latch output signal OUT_LATCH whilethe level shifter output signals OUT, OUTB are equalized in response tothe low enable signal CKC2. The level shifter 104 thus returns to asimilar state as that shown in FIG. 5A, where the output signals OUT andOUTB are equalized to prepare for the next cycle.

In a fourth time period T4 shown in FIG. 4B, the latch clock signal CKCand the enable signal CKC2 have cycled to low, while the complementlatch clock signal CKT has cycled to high. The input signal IN in theVDD domain remains low in the fourth time period T4. FIG. 5D illustratesoperation of the level shifter system 500 during the fourth time periodT4, in which the high enable signal CKC2 turns the transistor 316 on,and turns the transistor 304 off. In the latch 502, the clock signalsCKC and CKT turn on transistors 506 and 508 and turn off transistors 514and 516. The input signal IN is low, thus the inverted input signal INB322 turns on the sensing transistor 314 and pulls the output signal OUTat the output terminal 218 to a low state (ground) from its equalizedstate of time period T3. Since the input signal IN is low, the sensingtransistor 312 is off allowing the output signal OUTB at the outputterminal 216 to be pulled up from its equalized state to high (VDDM).Since the first tri-state inverter 410 is on while the second tri-stateinverter 414 is in a high impedance state, the feedthrough path of thelatch 502 is active. This allows for the first tri-state inverter toinvert the level shifter output signal OUT to produce a high OUTBXsignal at the node 406, which is then inverted by the inverter 412 andoutput at the latch output terminal 408 as a low output signalOUT_LATCH.

FIG. 4B further illustrates a fifth time period T5, in which the latchoutput signal OUT_LATCH is latched and the level shifter outputs OUT andOUTB are again equalized in preparation for the next cycle. FIG. 5Eshows operation of the system 500 for the fifth time period T5 418. Inthis time period the latch clock signal CKC and the enable signal CKC2go low, and the latch complement clock signal CKT goes high. Thesesignals turn on transistors 304, 514 and 516, and turn off transistors316, 506 and 508. The level shifter 104 is thus in a similar state asthat shown in FIG. 5A, where the output signals OUTB and OUT areequalized to prepare for the next cycle. With the first tri-stateinverter 410 moving to a high impedance state and the second tri-stateinverter 414 moving to an active state, the feedthrough path is cutwhile the feedback path is activated. This latches the current signalLATCH_OUT at the latch output terminal 408.

FIG. 6 is a flow-chart showing an example of a method 600 of levelshifting in accordance with the example embodiments. The method 600begins at operation 602 where the level shifter 104 equalizes outputssignals of the level shifter at a predetermined initial voltage level atfirst and second output terminals 216, 218. At an operation 604, thelevel shifter 104 receives an input signal IN 102 in a first voltagedomain on an input terminal. The level shifter 104 then receives anenable signal such as the CKC2 signal at operation 606, which enablesthe level shifter 104 to shift the level of the input signal IN 102 fromthe VDD domain into the VDDM domain. More specifically, the outputterminals are shifted from the equalized voltage levels (about half ofVDDM, for example) to complementary output signals OUT, OUTB in a secondvoltage domain VDDM, which is higher than the first voltage domain basedon the input signal IN and the enable signal CKC2.

As shown in FIG. 4B and FIGS. 5A-E, in some embodiments the outputsignal from the level shifter 104 is latched in the VDDM domain.

Known level shifters often are limited as to the difference between thevoltage range of the VDDM and VDD voltage domains. Some disclosedembodiments may provide a larger supply voltage split range between thefirst and second voltage domains. For instance, in some disclosedembodiments, the VDD voltage range is determined based on the thresholdvoltage Vt of the sensing transistors 312, 314. For a VDDM voltage rangeof 0 to 1.0 volts, some embodiments employ a VDD voltage range of 0 toless than 0.4 volts. Thus, some embodiments may employ a VDD voltageless than 40% of the VDDM voltage.

Disclosed embodiments thus include a level shifter that is configured toreceive an input signal in a first voltage domain and output an outputsignal in a second voltage domain. The level shifter includes an inputterminal configured to receive an input signal in a first voltagedomain, a first output terminal, and a second output terminal. A firstsensing circuit is configured to shift the input signal from the firstvoltage domain to the second voltage domain, and a second sensingcircuit is configured to shift the input signal from the first voltagedomain to the second voltage domain. An enable circuit is configured toequalize a voltage level of first and second output signals at therespective first and second output terminals in response to an enablesignal. The first and second sensing circuits are configured outputcomplementary output signals in the second voltage domain at the firstand second output terminals in response to the enable signal and theinput signal.

Further embodiments include a level shifting method in which outputsignals are equalized at first and second output terminals of a levelshifter. An input signal in a first voltage domain is received on aninput terminal, and an enable signal is received. Complementary firstand second output signals are output in a second voltage domain higherthan the first voltage domain at the first and second output terminalsbased on the input signal and the enable signal.

In accordance with still further embodiments, a level shifting systemincludes an input terminal configured to receive an input signal in afirst voltage domain, and a clock terminal configured to receive a clocksignal having first and second states. A level shifter is coupled to theinput terminal and is configured to equalize first and second outputsignals in response to the first clock signal state, and to output anoutput signal in a second voltage domain higher than the first voltagedomain in response to the input signal and the second clock signalstate. A latch is configured to latch the output signal from the levelshifter in the second domain in response to the clock signal firststate.

This disclosure outlines various embodiments so that those skilled inthe art may better understand the aspects of the present disclosure.Those skilled in the art should appreciate that they may readily use thepresent disclosure as a basis for designing or modifying other processesand structures for carrying out the same purposes and/or achieving thesame advantages of the embodiments introduced herein. Those skilled inthe art should also realize that such equivalent constructions do notdepart from the spirit and scope of the present disclosure, and thatthey may make various changes, substitutions, and alterations hereinwithout departing from the spirit and scope of the present disclosure.

What is claimed is:
 1. A level shifter comprising: an input terminalconfigured to receive an input signal in a first voltage domain; a firstoutput terminal; a second output terminal; a first inverter configuredto receive the input signal and shift the input signal from the firstvoltage domain to a first output signal at the first output terminal ina second voltage domain higher than the first voltage domain in responseto a logical high state of an enable signal in the first voltage domain;a second inverter configured to receive a complement of the input signaland shift the complement of the input signal from the first voltagedomain to a second output signal at the second output terminal in thesecond voltage domain in response to the logical high state of theenable signal; a pair of NMOS sensing transistors including a first NMOSsensing transistor and a second NMOS sensing transistor having a commonsource terminal, wherein a drain terminal of the first NMOS sensingtransistor is coupled to the first inverter, a gate terminal of thefirst NMOS sensing transistor is the input terminal, a drain terminal ofthe second NMOS sensing transistor is coupled to the second inverter,and a gate terminal of the second NMOS sensing transistor is configuredto receive the complement of the input signal; a PMOS transistor coupledbetween the first output terminal and the second output terminal andhaving a gate terminal connected to receive the enable signal in thefirst voltage domain, the PMOS transistor configured to equalize thefirst output signal and the second output signal in response to alogical low state of the enable signal.
 2. The level shifter of claim 1,wherein the PMOS transistor is configured to equalize the first outputsignal and the second output signal to a predetermined voltage level. 3.The level shifter of claim 2, wherein the predetermined voltage level ishalf of a second input voltage in the second voltage domain.
 4. Thelevel shifter of claim 1, further comprising a third inverter operatingin the first voltage domain and configured to create the complement ofthe input signal.
 5. The level shifter of claim 1, wherein the enablesignal is a clock pulse.
 6. The level shifter of claim 1, wherein alevel of the first voltage domain is less than 40% of a level of thesecond voltage domain.
 7. A level shifting system, comprising: an inputterminal configured to receive an input signal in a first voltagedomain; a first clock terminal configured to receive a first clocksignal having a logic low state and a logic high state in the firstvoltage domain; a first output terminal; a second output terminal; afirst inverter configured to receive the input signal and shift theinput signal from the first voltage domain to a first output signal atthe first output terminal in a second voltage domain higher than thefirst voltage domain in response to the logical high state of the firstclock signal; a second inverter configured to receive a complement ofthe input signal and shift the complement of the input signal from thefirst voltage domain to a second output signal at the second outputterminal in the second voltage domain in response to the logical highstate of the first clock signal; a pair of NMOS sensing transistorsincluding a first NMOS sensing transistor and a second NMOS sensingtransistor having a common source terminal, wherein a drain terminal ofthe first NMOS sensing transistor is coupled to the first inverter, agate terminal of the first NMOS sensing transistor is the inputterminal, a drain terminal of the second NMOS sensing transistor iscoupled to the second inverter, and a gate terminal of the second NMOSsensing transistor is configured to receive the complement of the inputsignal; a PMOS transistor coupled between the first output terminal andthe second output terminal and having a gate terminal connected toreceive the first clock signal in the first voltage domain, the PMOStransistor configured to equalize the first output signal and the secondoutput signal in response to the logical low state of the first clocksignal; and a latch circuit having a second clock terminal configured toreceive a second clock signal, the latch circuit configured to latch thesecond output signal in the second voltage domain in response to thesecond clock signal, wherein the second clock signal and the first clocksignal are in phase with one another.
 8. The system of claim 7, whereinthe PMOS transistor is configured to equalize the first output signaland the second output signal to a predetermined voltage level.
 9. Thesystem of claim 8, wherein the predetermined voltage level is half of asecond input voltage in the second voltage domain.
 10. The system ofclaim 7, further comprising a third inverter operating in the firstvoltage domain and configured to create the complement of the inputsignal.
 11. The system of claim 7, wherein a level of the first voltagedomain is less than 40% of a level of the second voltage domain.
 12. Thesystem of claim 7, wherein the latch circuit latches the second outputsignal when the first clock signal is in the logical low state.
 13. Thesystem of claim 7, wherein the latch circuit comprising: a firsttri-state inverter configured to invert the second output signal in thesecond voltage domain in response to the second clock signal; a fourthinverter coupled between the first tri-state inverter and a latchcircuit output terminal and configured to reinvert the inverted secondoutput signal in the second voltage domain; and a second tri-stateinverter coupled between the first tri-state inverter and the latchcircuit output terminal and configured to bypass the fourth inverter inresponse to the second clock signal.
 14. The system of claim 13, whereinwhen the second clock signal is at a logic low state of the second clocksignal, the first tri-state inverter inverts the second output signal inthe second voltage domain and the second tri-state inverter is turnedoff.
 15. The system of claim 13, wherein when the second clock signal isat a logic high state of the second clock signal, the first tri-stateinverter latches the second output signal in the second voltage domainand the second tri-state inverter is turned on to bypass the fourthinverter.
 16. A level shifting method, comprising: receiving an enablesignal having a logic high state and a logic low state in a firstvoltage domain; equalizing a first output signal at a first outputterminal and a second output signal at a second output terminal inresponse to the logic low state of the enable signal, the first outputsignal and the second output signal being in a second voltage domainhigher than the first voltage domain; receiving an input signal in thefirst voltage domain at an input terminal; and outputting the firstoutput signal at the first output terminal and second output signal atthe second output terminal based on the input signal and a complement ofthe input signal respectively in response to the logic high state of theenable signal.
 17. The level shifting method of claim 16, furthercomprising: latching the second output signal in the second voltagedomain in response to a clock signal, wherein the enable signal and theclock signal are in phase with one another.
 18. The level shiftingmethod of claim 16, further comprising: connecting the first outputterminal and the second output terminal through a PMOS transistor, thePMOS transistor having a gate terminal connected to receive the enablesignal.
 19. The level shifting method of claim 16, further comprising:inverting the input signal to the first output signal; and inverting thecomplement of the input signal to the second output signal.
 20. Themethod of claim 16, wherein the clock signal is in the second voltagedomain.